Samsung Plans November Construction Start at Taylor Fab 2

Unnamed industry sources said Samsung Electronics has secured orders for all planned high-bandwidth memory (HBM) base-die output at its second Taylor, Texas, fab, linking the project to AMD and Nvidia.

The sources said AMD accounts for most of the reported volume. Samsung has not confirmed the customers. A Samsung official said, “We cannot confirm customer-related details.”

Samsung spokeswoman Michele Glaze said Oct. 27 that construction at Taylor Fab 2 would begin in November and the facility is planned to be operational by 2030. Samsung set a 2030 mass-production target in July.

In its third-quarter results, Samsung said its foundry business improved on growth in HBM base-die sales and advanced-node sales. The company did not identify customers or connect those sales to Taylor Fab 2.

HBM is stacked memory used with compute devices. A base die serves as the interface between the memory stack and the compute device; it is one component in an HBM package, not a finished AMD or Nvidia processor.