Samsung Electronics Shows zNAND-O Design for Edge AI Workloads

Samsung Electronics has shown a zNAND-O memory design for edge artificial intelligence workloads as demand grows for customized storage in AI infrastructure.

The design uses through-silicon vias to stack NAND vertically in four- or eight-layer configurations. The structure is intended to shorten data paths while improving speed and power efficiency.

Samsung displayed the zNAND-O model at a memory-related event in the United States in August. The company’s approach focuses on adapting NAND storage for AI systems that require specialized performance characteristics.

The company is adapting NAND storage for AI applications, including edge systems that process data closer to where it is generated.

Samsung’s display highlights its development of storage technologies aimed at AI applications, including edge systems that process data closer to where it is generated.