CXMT Advances DRAM Cell Design Aimed at Higher Storage Density

ChangXin Memory Technologies has made progress on a memory-cell design aimed at increasing DRAM storage density and improving efficiency, while Samsung Electronics and SK Hynix pursue the same structure.

The development involves the architecture of a DRAM memory cell, with the goal of storing more data in the same space while using resources more efficiently.

The update comes as CXMT seeks to expand its DRAM business. Its global DRAM expansion faces supply and U.S. tool constraints, which may limit production growth and international competition.