CXMT Plans 4F² Server DRAM Launch as Samsung, SK Hynix Slide
The Chinese memory maker says its denser design will debut in next-generation server chips by year-end, intensifying competition in the DRAM market.

ChangXin Memory Technologies (CXMT) plans to launch next-generation server memory using a 4F² DRAM architecture by year-end, a development that sent major memory stocks lower and highlighted China’s progress despite technology restrictions.
Samsung and SK hynix shares fell more than 7% Tuesday in South Korea, while Micron closed 4% lower overnight. The market reaction reflected concerns that CXMT could narrow the gap with the world’s leading memory-chip manufacturers.
The 4F² design fits the same number of memory cells into a smaller area than conventional layouts. CXMT says its approach uses vertically surrounding-gate transistors to reduce leakage as the company scales the technology.
The planned product is next-generation server memory. CXMT’s DRAM market share rose from 4% a year earlier to 10% in the second quarter, adding to the competitive pressure in a market dominated by Samsung, SK hynix and Micron.