Samsung, SK Hynix Target Q2 2027 Production of Rubin Ultra 8-High HBM4
The memory makers are targeting mass production and shipments for Nvidia’s Rubin Ultra, planned for 2027. Nvidia is evaluating a mix of 8- and 12-layer HBM4 or HBM4E.

Samsung Electronics and SK Hynix are targeting the second quarter of 2027 to begin mass production and shipments of 8-high HBM4 for Nvidia’s Rubin Ultra, a next-generation AI accelerator planned for release that year.
Nvidia is evaluating a configuration that would combine 8- and 12-layer HBM4 or HBM4E, rather than relying only on 12-layer memory. The mixed configuration is being considered to support production stability and a steady supply for AI servers.
A 12-layer stack offers more memory capacity and throughput, but its added layers can increase heat and make manufacturing yields harder to maintain. An 8-layer option gives Nvidia another memory configuration as it prepares Rubin Ultra.
HBM4 uses a logic-process base die. SK Hynix has partnered with TSMC to manufacture that component. The target for 8-high HBM4 production and shipments is the second quarter of 2027.