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Atomera and IQE Develop GaN-on-Silicon Wafers for RF Use
The effort adapts IQE’s gallium nitride growth process to silicon substrates that use Atomera’s MST technology.

Atomera and IQE are developing gallium nitride wafers on silicon substrates for radio-frequency applications, using Atomera’s MST technology. The effort is focused on adapting IQE’s gallium nitride growth process to those substrates.
The companies are targeting wafers that combine lower cost with high performance. The development effort has not specified a production schedule.